FW905 no.8754-1/6 features ? composite type with an n-channel mosfet and a p-channel mosfet driving from a 2.5v supply voltage contained in a single package. ? high-density mounting. specifications absolute maximum ratings at ta=25 c parameter symbol conditions n-channel p-channel unit drain-to-source voltage v dss 20 --20 v gate-to-source voltage v gss 10 10 v drain current (dc) i d 7 --6 a drain current (pw 10 m s) i dp duty cycle 1% 52 --52 a allowable power dissipation p d mounted on a ceramic board 2.3 w (1500mm 2 5 0.8mm)1unit, pw 10s total dissipation p t mounted on a ceramic board 2.5 w (1500mm 2 5 0.8mm), pw 10s channel temperature tch 150 c storage temperature tstg --55 to +150 c electrical characteristics at ta=25 c ratings parameter symbol conditions min typ max unit [n-channel] drain-to-source breakdown voltage v (br)dss i d =1ma, v gs =0v 20 v zero-gate voltage drain current i dss v ds =20v, v gs =0v 1 m a gate-to-source leakage current i gss v gs = 8v, v ds =0v 10 m a cutoff voltage v gs (off) v ds =10v, i d =1ma 0.5 1.3 v forward transfer admittance ? yfs ? v ds =10v, i d =7a 9 15 s r ds (on)1 i d =7a, v gs =4v 18 24 m w static drain-to-source on-state resistance r ds (on)2 i d =3a, v gs =2.5v 20 33 m w input capacitance ciss v ds =10v, f=1mhz 1530 pf output capacitance coss v ds =10v, f=1mhz 230 pf reverse transfer capacitance crss v ds =10v, f=1mhz 215 pf marking : w905 continued on next page. ordering number : en8754 80906 / 22406pa ms im tb-00002087 FW905 n-channel and p-channel silicon mosfets general-purpose switching device applications sanyo semiconductors data sheet any and all sanyo semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. consult with your sanyo semiconductor representative nearest you before usingany sanyo semiconductor products described or contained herein in such applications. sanyo semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor products described or contained herein. tokyo office tokyo bldg., 1-10, 1 chome, ueno, taito-ku, tokyo, 110-8534 japan
FW905 no.8754-2/6 continued from preceding page. ratings parameter symbol conditions min typ max unit turn-on delay time t d (on) see specified test circuit. 19 ns rise time t r see specified test circuit. 225 ns turn-off delay time t d (off) see specified test circuit. 125 ns fall time t f see specified test circuit. 125 ns total gate charge qg v ds =10v, v gs =4v, i d =7a 18.5 nc gate-to-source charge qgs v ds =10v, v gs =4v, i d =7a 3.4 nc gate-to-drain miller charge qgd v ds =10v, v gs =4v, i d =7a 4.8 nc diode forward voltage v sd i s =7a, v gs =0v 0.79 1.2 v [p-channel] drain-to-source breakdown voltage v (br)dss i d =--1ma, v gs =0v --20 v zero-gate voltage drain current i dss v ds =--20v, v gs =0v --1 m a gate-to-source leakage current i gss v gs = 8v, v ds =0v 10 m a cutoff voltage v gs (off) v ds =--10v, i d =--1ma --0.4 --1.4 v forward transfer admittance ? yfs ? v ds =--10v, i d =--6a 7.8 13 s r ds (on)1 i d =--6a, v gs =--4v 30 40 m w static drain-to-source on-state resistance r ds (on)2 i d =--3a, v gs =--2.5v 42 59 m w input capacitance ciss v ds =--10v, f=1mhz 1720 pf output capacitance coss v ds =--10v, f=1mhz 260 pf reverse transfer capacitance crss v ds =--10v, f=1mhz 245 pf turn-on delay time t d (on) see specified test circuit. 19 ns rise time t r see specified test circuit. 390 ns turn-off delay time t d (off) see specified test circuit. 110 ns fall time t f see specified test circuit. 145 ns total gate charge qg v ds =--10v, v gs =--4v, i d =--6a 18.4 nc gate-to-source charge qgs v ds =--10v, v gs =--4v, i d =--6a 3.2 nc gate-to-drain miller charge qgd v ds =--10v, v gs =--4v, i d =--6a 5.2 nc diode forward voltage v sd i s =--6a, v gs =0v --0.82 --1.2 v package dimensions electrical connection unit : mm 7005-003 14 5 8 5.0 4.4 6.0 0.3 1.5 1.8 max 0.1 0.595 1.27 0.2 0.43 1 : source1 2 : gate1 3 : source2 4 : gate2 5 : drain2 6 : drain2 7 : drain1 8 : drain1 sanyo : sop8 8765 1234 top view 1 : source1 2 : gate1 3 : source2 4 : gate2 5 : drain2 6 : drain2 7 : drain1 8 : drain1
FW905 no.8754-3/6 switching time test circuit [n-channel] [p-channel] pw=10 m s d.c. 1% p. g 50 w g s d i d =5a r l =2 w v dd =10v v out FW905 v in 4.5v 0v v in pw=10 m s d.c. 1% p. g 50 w g s d i d = --6a r l =1.67 w v dd = --10v v out FW905 v in 0v --4v v in drain-to-source voltage, v ds -- v drain current, i d -- a gate-to-source voltage, v gs -- v drain current, i d -- a drain-to-source voltage, v ds -- v drain current, i d -- a gate-to-source voltage, v gs -- v drain current, i d -- a [pch] [pch] [nch] [nch] i d -- v ds i d -- v gs i d -- v ds i d -- v gs 0 0.05 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.1 0 1 2 3 6 5 4 8 7 0.4 0.3 0.35 0.15 0.2 0.25 it05892 0 0.2 0.4 0.8 0.6 1.0 1.2 1.4 1.6 1.8 it05893 v gs =1.5v 2.0v 2.5v 3.0v 4.5v ta=75 c --25 c v ds =10v 25 c 4.0v -- 1 -- 2 -- 3 -- 4 -- 5 -- 6 -- 7 -- 8 0 0 -- 1 -- 2 -- 3 -- 5 -- 6 --0.2 -- 4 0 --0.4 --0.6 --0.8 --1.0 --0.1 --0.3 --0.5 --0.7 --0.9 v gs = --1.0v --1.5v --2.0v --2.5v --8.0v it09896 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0 v ds = --10v 25 c --25 c ta=75 c it09897 --4.0v --5.0v --6.0v
FW905 no.8754-4/6 drain current, i d -- a forward transfer admittance, ? y fs ? -- s drain current, i d -- a forward transfer admittance, ? y fs ? -- s diode forward voltage, v sd -- v source current, i s -- a diode forward voltage, v sd -- v source current, i s -- a ? y fs ? -- i d i s -- v sd i s -- v sd ? y fs ? -- i d static drain-to-source on-state resistance, r ds (on) -- m w static drain-to-source on-state resistance, r ds (on) -- m w gate-to-source voltage, v gs -- v static drain-to-source on-state resistance, r ds (on) -- m w static drain-to-source on-state resistance, r ds (on) -- m w gate-to-source voltage, v gs -- v ambient temperature, ta -- c ambient temperature, ta -- c r ds (on) -- v gs r ds (on) -- ta r ds (on) -- v gs r ds (on) -- ta 02468 20 25 30 35 40 45 50 0 5 10 15 10 12 it05894 it09899 --75 --50 --25 0 25 50 75 100 125 150 175 0 5 10 30 25 20 15 50 45 40 35 ta=25 c 6a i d =3a i d =6a, v gs =4.0v i d =3a, v gs =2.5v [nch] [nch] --60 --40 --20 0 20 40 60 80 100 120 140 160 -- 0 -- 1 -- 2 -- 3 -- 4 -- 6 -- 7 -- 5 -- 8 it09898 20 30 10 40 50 60 70 80 90 100 0 it09900 10 20 30 40 50 60 70 80 90 0 ta=25 c --6a i d = --3a [pch] [pch] i d = --6a, v gs = --4.0v i d = --3a, v gs = --2.5v 0.01 0.1 1.0 10 3 5 7 2 5 3 2 7 3 5 7 2 0.4 0.5 0.6 0.7 0.8 0.9 1.0 it05897 it05896 0.01 0.1 1.0 10 23 57 23 7 52357 0.1 1.0 10 5 2 3 7 2 3 5 7 2 ta= --25 c 75 c 25 c v ds =10v ta=75 c 25 c -- 2 5 c v gs =0v [nch] [nch] it09901 --0.01 --0.1 2 3 57 2 3 57 2 3 57 --1.0 --10 3 1.0 7 5 3 2 0.1 7 10 2 5 3 2 v ds = --10v 75 c 25 c ta= --25 c it09902 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 --1.1 --0.01 --0.1 --10 7 5 3 2 2 --1.0 7 5 3 2 7 5 3 v gs =0v --25 c 25 c ta=75 c [pch] [pch]
FW905 no.8754-5/6 drain-to-source voltage, v ds -- v drain current, i d -- a drain-to-source voltage, v ds -- v drain current, i d -- a v gs -- qg a s o a s o v gs -- qg total gate charge, qg -- nc gate-to-source voltage, v gs -- v total gate charge, qg -- nc gate-to-source voltage, v gs -- v [pch] 0 --5 --10 --15 --20 100 1000 5 3 2 7 5 3 2 f=1mhz ciss coss crss it09904 02 6 10 14 4 8 12 16 20 18 0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 v ds = --10v i d = --6a it09906 [pch] --1.0 --10 --100 --0.01 --0.1 2 3 5 7 2 3 5 7 2 3 5 7 2 3 5 7 it09908 --0.01 23 57 --1.0 --10 --0.1 23 57 23 57 23 i d = --6a operation in this area is limited by r ds (on). 10ms 100ms 1ms i dp = --52a 10 m s dc operation (ta=25 c) [pch] 10s 24 0681014 12 16 18 20 100 1000 7 2 3 5 7 5 3 2 it05899 10 100 1000 0.1 1.0 23 57 57 23 2 3 5 7 2 3 5 7 it05898 coss crss ciss f=1mhz t d (on) t r t d (off) t f v dd =10v v gs =4.5v [nch] [nch] --0.01 --0.1 23 57 2 --1.0 357 2 --10 357 2 100 7 5 3 2 1000 7 5 3 2 10 v dd = -- 10v v gs = -- 4 v t d (on) t d (off) t r t f it09903 [pch] 1.0 10 100 0.01 0.1 2 3 5 7 2 3 5 7 2 3 5 7 2 3 5 7 it09907 0.01 23 57 1.0 10 0.1 23 57 23 57 23 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 20 15 510 4.0 it09905 v ds =10v i d =7a i d =7a operation in this area is limited by r ds (on). 10ms 100ms 1ms i dp =52a 10 m s dc operation (ta=25 c) [nch] [nch] 10s drain-to-source voltage, v ds -- v ciss, coss, crss -- pf drain current, i d -- a switching time, sw time -- ns drain-to-source voltage, v ds -- v ciss, coss, crss -- pf drain current, i d -- a switching time, sw time -- ns sw time -- i d ciss, coss, crss -- v ds ciss, coss, crss -- v ds sw time -- i d ta=25 c single pulse mounted on a ceramic board (1500mm 2 5 0.8mm) 1unit ta=25 c single pulse mounted on a ceramic board (1500mm 2 5 0.8mm) 1unit
FW905 no.8754-6/6 ps [nch, pch] ambient temperature, ta -- c allowable power dissipation, p d -- w p d -- ta 0 0 20 40 0.4 1.6 1.2 0.8 1.7 2.0 60 80 100 120 140 160 it09909 mounted on a ceramic board (1500mm 2 5 0.8mm) 1unit note on usage : since the FW905 is a mosfet product, please avoid using this device in the vicinity of highly charged objects. specifications of any and all sanyo semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. sanyo semiconductor co., ltd. strives to supply high-quality high-reliability products. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of sanyo semiconductor co., ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor product that you intend to use. information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. sanyo semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. this catalog provides information as of february, 2006. specifications and information herein are subject to change without notice.
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